Manufacturer Part Number
IPP126N10N3G
Manufacturer
Infineon Technologies
Introduction
High performance discrete N-Channel MOSFET
Product Features and Performance
High drain-source breakdown voltage of 100V
Low on-resistance of 12.6 mΩ
Continuous drain current of 58A at 25°C case temperature
Wide operating temperature range of -55°C to 175°C
High input capacitance of 2500 pF
Maximum power dissipation of 94W at 25°C case temperature
Product Advantages
Excellent performance and efficiency
Robust design for high-power applications
Reliable and long-lasting operation
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs Max): ±20V
On-State Resistance (Rds(on) Max): 12.6 mΩ
Drain Current (Id Continuous): 58A
Input Capacitance (Ciss Max): 2500 pF
Power Dissipation (Tc): 94W
Quality and Safety Features
Complies with industry standards and regulations
Robust construction for reliable operation
Undergoes rigorous testing and quality control
Compatibility
Suitable for a wide range of high-power electronic applications
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Industrial equipment
Product Lifecycle
This product is currently in production and not nearing discontinuation
Replacement and upgrade options are available
Several Key Reasons to Choose This Product
Excellent performance and efficiency
Robust design for high-power applications
Reliable and long-lasting operation
Wide operating temperature range
Compatibility with a variety of high-power electronic applications
IPP12CN10LCypress Semiconductor (Infineon Technologies)