Manufacturer Part Number
IPP120P04P4L03AKSA1
Manufacturer
Infineon Technologies
Introduction
This product is a discrete semiconductor device, specifically a P-Channel MOSFET transistor, part of the Infineon OptiMOS series.
Product Features and Performance
Operating temperature range: -55°C to 175°C (TJ)
Drain-to-Source Voltage (Vdss): 40V
Maximum Gate-to-Source Voltage (Vgs): ±16V
On-state Resistance (Rds(on)): 3.4mΩ @ 100A, 10V
Continuous Drain Current (Id): 120A @ 25°C (Tc)
Input Capacitance (Ciss): 15,000pF @ 25V
Power Dissipation (Tc): 136W
Gate Charge (Qg): 234nC @ 10V
Product Advantages
Automotive-grade AEC-Q101 qualified
Optimized for high efficiency and low power loss
Suitable for high-current, high-power applications
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
FET Type: P-Channel
Threshold Voltage (Vgs(th)): 2.2V @ 340A
Drive Voltage: 4.5V (Max Rds(on)), 10V (Min Rds(on))
Mounting Type: Through Hole
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Suitable for a wide range of high-power, high-current applications in the automotive, industrial, and consumer electronics sectors.
Application Areas
Motor drives
Power supplies
Switching regulators
Battery management systems
Electric vehicle (EV) and hybrid electric vehicle (HEV) power electronics
Product Lifecycle
This product is an active, currently available part. There are no indications of it being near discontinuation, and replacements or upgrades may be available from Infineon.
Key Reasons to Choose This Product
Robust automotive-grade design and AEC-Q101 qualification
Exceptional performance characteristics, including low on-state resistance and high current capability
Optimized for high efficiency and low power loss, suitable for high-power applications
Broad compatibility and versatility across various industries and applications