Manufacturer Part Number
IPP120N20NFDAKSA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with low on-resistance and high current capability
Product Features and Performance
Low on-resistance for high efficiency
High current capability up to 84A
Wide operating temperature range of -55°C to 175°C
Low gate charge for fast switching
Robust and reliable design
Product Advantages
Optimized for high-power, high-efficiency applications
Excellent thermal performance
High ruggedness and reliability
Key Technical Parameters
Drain to Source Voltage (Vdss): 200V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 12mOhm @ 84A, 10V
Current Continuous Drain (Id) @ 25°C: 84A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 100V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270A
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10V
Quality and Safety Features
ROHS3 compliant
Robust and reliable design
Compatibility
Through-hole mounting
Compatible with a wide range of high-power electronic applications
Application Areas
High-power switching applications
Motor drives
Power supplies
Industrial and automotive electronics
Product Lifecycle
This product is currently in production and has no known plans for discontinuation
Replacement or upgrade options may be available from Infineon Technologies
Key Reasons to Choose This Product
Excellent performance and efficiency with low on-resistance
High current capability and wide operating temperature range
Robust and reliable design for demanding applications
Optimized for high-power, high-efficiency systems
Proven track record and support from Infineon Technologies