Manufacturer Part Number
IPP086N10N3GXKSA1
Manufacturer
Infineon Technologies
Introduction
This is a high-performance N-channel MOSFET transistor from Infineon Technologies, part of the OptiMOS series.
Product Features and Performance
Drain to Source Voltage (Vdss) of 100V
Maximum Vgs of ±20V
Very low on-resistance (Rds(on)) of 8.6mΩ @ 73A, 10V
Continuous Drain Current (Id) of 80A at 25°C case temperature
Supports operating temperature range of -55°C to 175°C
Input Capacitance (Ciss) of 3980pF @ 50V
Maximum Power Dissipation of 125W at case temperature
Product Advantages
Excellent power efficiency due to low on-resistance
Wide operating temperature range
High current handling capability
Robust design for reliable performance
Key Technical Parameters
FET Type: N-Channel MOSFET
Vgs(th) (Max) of 3.5V @ 75A
Drive Voltage Range: 6V (max Rds(on)), 10V (min Rds(on))
Gate Charge (Qg) of 55nC @ 10V
Quality and Safety Features
RoHS3 compliant
Through-hole mounting for secure installation
Compatibility
This MOSFET is compatible with a wide range of electronic circuits and power supply applications.
Application Areas
Switching power supplies
Motor drives
Industrial automation and control
Automotive electronics
Product Lifecycle
This product is currently in active production and is not nearing discontinuation. Replacement or upgrade options may be available from Infineon Technologies.
Key Reasons to Choose This Product
Excellent power efficiency and low on-resistance for improved system performance
Wide operating temperature range for use in diverse environments
High current handling capability for demanding applications
Robust and reliable design for long-lasting performance
RoHS compliance for environmental responsibility
IPP08CN10LINF