Manufacturer Part Number
IPP082N10NF2SAKMA1
Manufacturer
Infineon Technologies
Introduction
The IPP082N10NF2SAKMA1 is a high-performance N-channel MOSFET from Infineon Technologies, part of the StrongIRFET 2 series.
Product Features and Performance
100V drain-to-source voltage
2mΩ maximum on-resistance at 50A, 10V
15A continuous drain current at 25°C ambient temperature
77A continuous drain current at 25°C case temperature
2000pF maximum input capacitance at 50V
8W maximum power dissipation at 25°C ambient temperature
100W maximum power dissipation at 25°C case temperature
-55°C to 175°C operating temperature range
Product Advantages
Excellent on-resistance performance for high-efficiency power conversion
High current and power handling capability
Wide operating temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 8.2mΩ @ 50A, 10V
Continuous Drain Current (Id): 15A (Ta), 77A (Tc)
Input Capacitance (Ciss): 2000pF @ 50V
Power Dissipation (Pd): 3.8W (Ta), 100W (Tc)
Gate Threshold Voltage (Vgs(th)): 3.8V @ 46A
Quality and Safety Features
RoHS3 compliant
Through-hole mounting
Compatibility
Compatible with various power electronics and switching applications
Application Areas
Switching power supplies
Motor drives
Industrial automation and control
Automotive electronics
Product Lifecycle
Current production, no indication of discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent on-resistance and power handling performance for high-efficiency power conversion
Wide operating temperature range for reliable operation in demanding environments
RoHS3 compliance for use in diverse applications
Through-hole mounting for easy integration into existing designs
