Manufacturer Part Number
IPP084N06L3GXKSA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET for use in high-frequency and high-power applications
Product Features and Performance
Wide operating temperature range of -55°C to 175°C
Low on-resistance of 8.4 mΩ at 50 A, 10 V
High current capability of 50 A continuous drain current at 25°C
Low gate charge of 29 nC at 4.5 V
Low input capacitance of 4900 pF at 30 V
Product Advantages
Optimized for high-frequency and high-power applications
Excellent thermal performance
Efficient power conversion
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60 V
Maximum Gate-to-Source Voltage (Vgs): ±20 V
Threshold Voltage (Vgs(th)): 2.2 V at 34 A
Drain Current (Id): 50 A continuous at 25°C
Quality and Safety Features
RoHS 3 compliant
Suitable for through-hole mounting
Compatibility
Compatible with various high-frequency and high-power applications
Application Areas
Switching power supplies
Motor drives
Industrial and automotive electronics
Product Lifecycle
Current production status, no indication of discontinuation
Key Reasons to Choose This Product
High-performance N-channel power MOSFET
Wide operating temperature range
Low on-resistance and high current capability
Efficient power conversion for high-frequency and high-power applications
IPP08CN10LINF