Manufacturer Part Number
IPI60R165CP
Manufacturer
Infineon Technologies
Introduction
The IPI60R165CP is a high-performance N-channel MOSFET from Infineon Technologies, designed for use in a variety of power electronics applications.
Product Features and Performance
600V drain-to-source voltage
165mΩ maximum on-resistance at 12A and 10V
21A continuous drain current at 25°C
2000pF maximum input capacitance at 100V
192W maximum power dissipation at Tc
Capable of operating at temperatures between -55°C and 150°C
Product Advantages
High-voltage and low on-resistance characteristics for efficient power conversion
Robust design for reliable operation in demanding applications
Wide operating temperature range for use in diverse environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 165mΩ @ 12A, 10V
Continuous Drain Current (Id): 21A @ 25°C
Input Capacitance (Ciss): 2000pF @ 100V
Power Dissipation (Pd): 192W @ Tc
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Robust TO-262-3 package with long leads for reliable connections
Compatibility
Suitable for use in a wide range of power electronics applications, including power supplies, motor drives, and industrial equipment
Application Areas
Switching power supplies
Motor drives
Industrial automation and control systems
Renewable energy systems
Product Lifecycle
This product is currently in production and widely available
Replacement or upgraded models may become available in the future as technology advances
Several Key Reasons to Choose This Product
High-voltage and low on-resistance performance for efficient power conversion
Robust design and wide operating temperature range for reliable operation in demanding applications
RoHS3 compliance for environmentally responsible use
Compatibility with a wide range of power electronics applications
