Manufacturer Part Number
IPI50R350CP
Manufacturer
Infineon Technologies
Introduction
The IPI50R350CP is a high-performance N-channel MOSFET from Infineon Technologies, designed for various power electronics applications.
Product Features and Performance
Drain to Source Voltage (Vdss) of 550 V
Very low on-resistance (Rds(on)) of 350 mOhm @ 5.6 A, 10 V
Continuous Drain Current (Id) of 10 A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance (Ciss) of 1020 pF @ 100 V
Maximum Power Dissipation of 89 W at 25°C case temperature
Product Advantages
Excellent efficiency and low power loss
Robust and reliable performance
Suitable for high-voltage, high-power applications
Compact and easy-to-integrate design
Key Technical Parameters
N-Channel MOSFET
Vgs(th) (Max) of 3.5 V @ 370 A
Gate Charge (Qg) of 25 nC @ 10 V
Mounting Type: Through Hole
Quality and Safety Features
Designed and manufactured to high-quality standards
Complies with relevant safety and regulatory requirements
Compatibility
Suitable for use in a wide range of power electronics applications, including power supplies, motor drives, and industrial automation
Application Areas
Switching power supplies
Motor drives
Industrial automation and control
Renewable energy systems
Automotive electronics
Product Lifecycle
The IPI50R350CP is an active product, with no indication of discontinuation or upcoming replacements.
Key Reasons to Choose This Product
Excellent performance and efficiency
Robust and reliable design
Wide range of applications
Compliance with safety and regulatory requirements
Availability and long-term support from Infineon Technologies
