Manufacturer Part Number
IPI50R299CP
Manufacturer
Infineon Technologies
Introduction
The IPI50R299CP is a high-performance N-channel MOSFET transistor from Infineon Technologies. It is part of the CoolMOS series and designed for switching and power conversion applications.
Product Features and Performance
Operates in the temperature range of -55°C to 150°C
Drain-to-Source voltage of 500V
Maximum Gate-to-Source voltage of ±20V
Low on-resistance of 299mOhm at 6.6A and 10V
Continuous Drain Current of 12A at 25°C
Input Capacitance of 1190pF at 100V
Maximum Power Dissipation of 104W at Tc
N-Channel MOSFET design
Product Advantages
Excellent switching performance
High voltage and current handling capability
Low on-resistance for high efficiency
Wide operating temperature range
RoHS3 compliant
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 299mOhm @ 6.6A, 10V
Continuous Drain Current (Id): 12A @ 25°C
Input Capacitance (Ciss): 1190pF @ 100V
Power Dissipation (Ptot): 104W @ Tc
Quality and Safety Features
RoHS3 compliant
Meets industrial safety and quality standards
Compatibility
Suitable for a wide range of switching and power conversion applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Power factor correction circuits
Lighting ballasts
Various industrial and consumer electronics
Product Lifecycle
The IPI50R299CP is an active product and not nearing discontinuation.
Replacement and upgrade options are available from Infineon Technologies.
Key Reasons to Choose This Product
Excellent performance and efficiency due to low on-resistance
Wide operating temperature range for versatile applications
High voltage and current handling capability
Robust and reliable design for industrial and consumer use
RoHS3 compliance for environmentally-friendly applications
