Manufacturer Part Number
IPG20N04S4L11ATMA1
Manufacturer
Infineon Technologies
Introduction
This product is a dual N-channel MOSFET from Infineon Technologies, part of their OptiMOS series, designed for automotive applications and meeting the AEC-Q101 standard.
Product Features and Performance
2 N-Channel MOSFET in a single package
40V drain-to-source voltage (Vdss)
6mΩ maximum on-resistance (RDS(on)) at 17A, 10V
20A continuous drain current (ID) at 25°C
1990pF maximum input capacitance (Ciss) at 25V
26nC maximum gate charge (Qg) at 10V
Logic level gate (Vgs(th) max 2.2V at 15A)
Wide operating temperature range of -55°C to 175°C
Product Advantages
Optimized for automotive applications
Meets AEC-Q101 standard for high reliability
Low on-resistance for efficient power conversion
Small package size (8-PowerVDFN) for compact design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
On-Resistance (RDS(on)): 11.6mΩ max @ 17A, 10V
Continuous Drain Current (ID): 20A @ 25°C
Input Capacitance (Ciss): 1990pF max @ 25V
Gate Charge (Qg): 26nC max @ 10V
Gate Threshold Voltage (Vgs(th)): 2.2V max @ 15A
Quality and Safety Features
RoHS3 compliant
Automotive-grade design and manufacturing
Compatibility
This MOSFET is suitable for use in a variety of automotive and industrial applications where high efficiency, high power density, and reliability are required.
Application Areas
Motor control
Power conversion
Battery management systems
Automotive electronics
Product Lifecycle
This product is part of Infineon's current portfolio and is not nearing discontinuation. Replacement or upgrade options may be available in the future as technology evolves.
Key Reasons to Choose This Product
Optimized for automotive applications and meeting AEC-Q101 standard
Low on-resistance for efficient power conversion
Wide operating temperature range suitable for harsh environments
Small package size for compact design
Reliable and high-quality performance
