Manufacturer Part Number
IPG20N04S4L07ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance, automotive-qualified N-channel MOSFET array in a compact 8-pin PowerVDFN package.
Product Features and Performance
Automotive-grade AEC-Q101 qualified
Dual N-channel MOSFET configuration
40V drain-to-source voltage
20A continuous drain current
Ultra-low on-resistance of 7.2mΩ
High input capacitance of 3980pF
Logic-level gate with 2.2V threshold
Low gate charge of 50nC
Product Advantages
Compact and space-efficient package
High power density and efficiency
Suitable for automotive applications
Robust design for harsh environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
On-Resistance (Rds(on)): 7.2mΩ
Continuous Drain Current (Id): 20A
Input Capacitance (Ciss): 3980pF
Gate Threshold Voltage (Vgs(th)): 2.2V
Gate Charge (Qg): 50nC
Quality and Safety Features
RoHS3 compliant
Automotive-grade AEC-Q101 qualified
Suitable for harsh environments
Compatibility
Suitable for a wide range of automotive and industrial applications
Application Areas
Automotive systems
Industrial motor drives
Switching power supplies
General power management
Product Lifecycle
Current product, no discontinuation planned
Availability of replacements and upgrades
Key Reasons to Choose This Product
High power density and efficiency
Robust automotive-grade design
Compact and space-efficient package
Suitable for harsh environments
Excellent technical performance
