Manufacturer Part Number
IPG20N04S4L11AATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance dual N-channel MOSFET transistor with low on-resistance and high current capability, designed for automotive and industrial applications.
Product Features and Performance
Dual N-channel MOSFET design
Low on-resistance (RDS(on) = 11.6 mΩ)
High continuous drain current (ID = 20 A)
Wide operating temperature range (-55°C to 175°C)
Optimized for high-efficiency switching applications
Robust and reliable performance
Product Advantages
Excellent thermal management
High power density
Increased energy efficiency
Improved system reliability
Key Technical Parameters
Drain-to-Source Voltage (VDS): 40 V
Gate-to-Source Voltage (VGS): ±20 V
Continuous Drain Current (ID): 20 A
On-Resistance (RDS(on)): 11.6 mΩ
Input Capacitance (Ciss): 1990 pF
Gate Charge (Qg): 26 nC
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS3 compliant
Wettable flank for improved solderability
Compatibility
Suitable for use in a wide range of automotive and industrial applications
Application Areas
Power converters
Motor drives
Lighting and lamp control
Industrial automation equipment
Automotive systems
Product Lifecycle
This product is currently in active production and is not near discontinuation.
Replacement or upgraded products may become available in the future as technology advances.
Key Reasons to Choose This Product
Excellent power efficiency and thermal management capabilities
High current handling and low on-resistance for improved system performance
Robust and reliable design for demanding applications
Automotive-grade quality and safety features
Compatibility with a wide range of industrial and automotive systems
