Manufacturer Part Number
IPG20N04S4-08
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and high current capability
Product Features and Performance
Dual N-channel MOSFET configuration
Low on-resistance of 7.6 mΩ @ 17 A, 10 V
High continuous drain current of 20 A at 25°C
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 2,940 pF @ 25 V
Low gate charge of 36 nC @ 10 V
Product Advantages
Excellent efficiency and thermal performance
Compact surface-mount package
Suitable for high-power switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40 V
Continuous Drain Current (Id): 20 A @ 25°C
On-Resistance (Rds(on)): 7.6 mΩ @ 17 A, 10 V
Gate Threshold Voltage (Vgs(th)): 4 V @ 30 A
Quality and Safety Features
Robust design for high reliability
Compliant with relevant safety standards
Compatibility
Suitable for a wide range of high-power switching applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
Current product, no indication of discontinuation
Replacement or upgrade options may be available from Infineon
Key Reasons to Choose This Product
Excellent efficiency and thermal performance
High current capability and low on-resistance
Compact and robust surface-mount package
Suitable for a wide range of high-power switching applications
