Manufacturer Part Number
IPG20N04S408ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET in VDFN package
Suitable for high power density and high efficiency applications
Product Features and Performance
Optimized for high efficiency and high power density
Low on-resistance and gate charge for improved switching performance
Wide operating temperature range of -55°C to 175°C
2 N-Channel configuration in a single package
Product Advantages
Excellent thermal performance
Reduced power losses
Efficient switching
Key Technical Parameters
Drain to Source Voltage (Vdss): 40V
On-Resistance (Rds(on)): 7.6mΩ @ 17A, 10V
Continuous Drain Current (Id): 20A @ 25°C
Input Capacitance (Ciss): 2940pF @ 25V
Gate Threshold Voltage (Vgs(th)): 4V @ 30A
Gate Charge (Qg): 36nC @ 10V
Quality and Safety Features
RoHS3 compliant
Tape & Reel packaging
Compatibility
Suitable for a wide range of high-power density and high-efficiency applications
Application Areas
Switching power supplies
Motor drives
Industrial and automotive electronics
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options may be available from Infineon
Key Reasons to Choose This Product
Excellent thermal performance and efficiency
Low on-resistance and gate charge for improved switching
Wide operating temperature range for versatile applications
2 N-Channel configuration in a single package for space-saving design
