Manufacturer Part Number
IPC100N04S52R8ATMA1
Manufacturer
Infineon Technologies
Introduction
The IPC100N04S52R8ATMA1 is a high-performance N-channel MOSFET transistor from Infineon Technologies' OptiMOS series.
Product Features and Performance
Low on-resistance (RDS(on) = 2.8 mΩ @ 50 A, 10 V)
High current capability (ID = 100 A @ 25°C)
Wide operating temperature range (-55°C to 175°C)
Low gate charge (Qg = 45 nC @ 10 V)
High input capacitance (Ciss = 2600 pF @ 25 V)
High power dissipation capability (75 W @ Tc)
Product Advantages
Excellent power efficiency due to low RDS(on)
Suitable for high-current applications
Wide temperature range for versatile use
Fast switching performance
Key Technical Parameters
Vdss: 40 V
Vgs (max): ±20 V
Vgs(th) (max): 3.4 V @ 30 A
Drive voltage: 7 V (max RDS(on)), 10 V (min RDS(on))
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Compatibility
Compatible with a wide range of electronic systems and applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
This product is currently in production and available for purchase.
Replacement or upgrade options may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent power efficiency and high current capability for demanding applications
Wide operating temperature range for robust performance in diverse environments
Fast switching characteristics for high-speed power conversion
Surface mount package for easy integration into compact designs
