Manufacturer Part Number
IPC100N04S51R7ATMA1
Manufacturer
Infineon Technologies
Introduction
This product is a discrete semiconductor device, specifically a single MOSFET transistor.
Product Features and Performance
N-Channel MOSFET
40V drain-source voltage
100A continuous drain current at 25°C
7mΩ maximum on-resistance at 50A, 10V
4810pF maximum input capacitance at 25V
115W maximum power dissipation at Tc
4V maximum gate-source threshold voltage at 60A
7V to 10V drive voltage range for minimum and maximum on-resistance
83nC maximum gate charge at 10V
Product Advantages
High current handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range (-55°C to 175°C)
Suitable for high-power switching applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 40V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1.7mΩ
Drain Current (Id): 100A
Power Dissipation (Pd): 115W
Gate Charge (Qg): 83nC
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount assembly
Compatibility
Compatible with a wide range of high-power switching applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial automation equipment
Product Lifecycle
This product is an active part and not nearing discontinuation.
Replacements and upgrades may be available from the manufacturer.
Key Reasons to Choose This Product
High current handling capability for efficient power conversion
Low on-resistance for improved efficiency
Wide operating temperature range for diverse applications
Suitable for high-power switching applications
RoHS3 compliance for environmental responsibility
Surface mount compatibility for ease of assembly
