Manufacturer Part Number
IPC100N04S51R2ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor designed for power switching applications
Product Features and Performance
Optimized for high-frequency and high-efficiency power conversion
Low on-resistance and fast switching
Robust device with high drain-source voltage rating
Product Advantages
Excellent figure of merit (FOM) for high efficiency
High power density and reduced system size
Reliable operation in harsh environments
Key Technical Parameters
Drain-source voltage (Vdss): 40 V
On-resistance (Rds(on)): 1.2 mΩ @ 50 A, 10 V
Continuous drain current (Id): 100 A @ 25°C
Input capacitance (Ciss): 7650 pF @ 25 V
Power dissipation: 150 W @ Tc
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Suitable for surface mount assembly
Compatible with standard MOSFET drivers
Application Areas
Switch-mode power supplies
Motor drives
Power inverters
Battery management systems
Product Lifecycle
Currently in active production
No immediate plans for discontinuation
Replacement/upgrade parts available from Infineon
Key Reasons to Choose This Product
High efficiency and power density for compact designs
Robust performance in harsh environments
Proven reliability and quality from Infineon
Wide range of compatible applications
