Manufacturer Part Number
IPB60R120P7ATMA1
Manufacturer
Infineon Technologies
Introduction
This product is a discrete semiconductor device in the form of an N-channel MOSFET transistor.
Product Features and Performance
High voltage capability up to 600V
Low on-resistance (RDS(on)) of 120mΩ
High current capability of 26A continuous at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching performance with low input capacitance of 1544pF
Low gate charge of 36nC at 10V
Suitable for high-frequency and high-efficiency power conversion applications
Product Advantages
Improved energy efficiency through low conduction losses
High reliability and robust design
Compact surface mount package (TO-263-3)
Compatible with standard MOSFET driving circuits
Key Technical Parameters
Drain-Source Voltage (VDS): 600V
Gate-Source Voltage (VGS): ±20V
Continuous Drain Current (ID): 26A at 25°C
On-Resistance (RDS(on)): 120mΩ at 8.2A, 10V
Input Capacitance (Ciss): 1544pF at 400V
Power Dissipation (PD): 95W at 25°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
This MOSFET is compatible with standard gate driver circuits and can be used in a wide range of power conversion applications.
Application Areas
Switch-mode power supplies
Inverters
Motor drives
Uninterruptible power supplies (UPS)
Welding equipment
Industrial automation and control
Product Lifecycle
This product is an active and in-production part from Infineon Technologies. No discontinuation or immediate replacement is planned.
Key Reasons to Choose This Product
Excellent energy efficiency through low conduction losses
High reliability and robust design for industrial applications
Compact surface mount package for space-constrained designs
Compatibility with standard MOSFET driving circuits
Wide operating temperature range suitable for harsh environments
Fast switching performance enabling high-frequency power conversion
