Manufacturer Part Number
IPB60R099CPAATMA1
Manufacturer
Infineon Technologies
Introduction
The IPB60R099CPAATMA1 is a high-performance N-Channel MOSFET transistor from Infineon Technologies' CoolMOS CP series.
Product Features and Performance
600V Drain-Source Voltage (Vdss)
105mΩ maximum On-Resistance (Rds(on)) at 18A and 10V
31A continuous drain current (Id) at 25°C case temperature
2800pF maximum Input Capacitance (Ciss) at 100V
255W maximum Power Dissipation at 25°C case temperature
Wide operating temperature range of -40°C to 150°C
Product Advantages
Excellent energy efficiency and low switching losses
Robust and reliable performance
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Maximum Gate-Source Voltage (Vgs): ±20V
Threshold Voltage (Vgs(th)): 3.5V at 1.2mA
Drive Voltage (Max Rds(on), Min Rds(on)): 10V
Quality and Safety Features
RoHS3 compliant
Housed in a TO-263-3 (D-Pak) surface mount package
Compatibility
Compatible with a wide range of high-voltage, high-power applications.
Application Areas
Switch-mode power supplies
Welding equipment
Industrial motor drives
Lighting ballasts
Renewable energy systems
Product Lifecycle
This product is currently in production and available. There are no plans for discontinuation or replacements at this time.
Key Reasons to Choose This Product
High energy efficiency and low switching losses
Robust and reliable performance in high-voltage, high-power applications
Wide operating temperature range
RoHS3 compliant for environmentally-friendly use
Compact and easy-to-use surface mount package
IPB60R090CFD7ATMA1