Manufacturer Part Number
IPB60R099P7ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance power MOSFET with CoolMOS P7 technology
Product Features and Performance
600V MOSFET with ultra-low RDS(on) of 99mOhm
Low input capacitance (Ciss) of 1952pF
Low gate charge (Qg) of 45nC
High power dissipation of 117W
Wide operating temperature range of -55°C to 150°C
Product Advantages
Extremely low conduction losses
Reduced switching losses
Improved efficiency in power conversion applications
Compact design and high power density
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate to Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 31A
On-State Resistance (Rds(on)): 99mOhm
Quality and Safety Features
RoHS3 compliant
Halogen-free package
Compatibility
TO-263-3, DPak (2 Leads + Tab), TO-263AB package
Compatible with various power conversion applications
Application Areas
Switch-mode power supplies
Induction heating
Motor drives
Industrial and consumer electronics
Product Lifecycle
This product is currently in production.
Replacements and upgrades may be available in the future.
Key Reasons to Choose This Product
Excellent efficiency and power density
Optimized for high-voltage, high-power applications
Reliable performance with wide operating temperature range
Industry-leading CoolMOS P7 technology
Compact and easy-to-use package
