Manufacturer Part Number
IPB100N04S2-04
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
MOSFET (Metal Oxide) technology
N-Channel FET type
Operating temperature: -55°C to 175°C
Drain to Source Voltage (Vdss): 40V
Gate to Source Voltage (Vgs) Max: ±20V
RDS(on) Max @ Id, Vgs: 3.3mOhm @ 80A, 10V
Continuous Drain Current (Id) @ 25°C: 100A
Input Capacitance (Ciss) Max @ Vds: 5300pF @ 25V
Power Dissipation (Max): 300W
Gate Charge (Qg) Max @ Vgs: 172nC @ 10V
Product Advantages
High current handling capability
Low on-resistance
Compact surface mount package
Key Technical Parameters
Manufacturer's packaging: PG-TO263-3-2
Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Vgs(th) Max @ Id: 4V @ 250A
Drive Voltage (Max RDS(on), Min RDS(on)): 10V
Quality and Safety Features
Suitable for high power, high current applications
Robust design for reliable performance
Compatibility
Surface mount package
Compatible with various high-power electronic circuits
Application Areas
Suitable for high-power, high-current applications such as motor drives, power supplies, and power converters
Product Lifecycle
Current product offering
Replacement or upgrade options may be available
Key Reasons to Choose This Product
High current handling capability up to 100A
Extremely low on-resistance of 3.3mOhm
Compact surface mount package for efficient board layout
Robust design for reliable performance in high-power applications
Suitable for a wide range of high-power, high-current electronics