Manufacturer Part Number
IPB090N06N3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with low on-resistance and optimized for power-dense applications
Product Features and Performance
Extremely low on-resistance of 9 mOhm
Continuous drain current of 50A at 25°C
Wide operating temperature range of -55°C to 175°C
Low gate charge of 36 nC at 10V
High power dissipation of 71W
Product Advantages
Optimized for power-dense applications
Excellent thermal performance
Reliable and robust design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 9 mOhm
Drain Current (Id): 50A
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments
Compatibility
Surface mount package (PG-TO263-3)
Compatible with a wide range of power applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial automation
Telecommunications equipment
Product Lifecycle
Currently available
No plans for discontinuation
Several Key Reasons to Choose This Product
Excellent performance and efficiency
Reliable and robust design
Optimized for power-dense applications
Wide operating temperature range
RoHS3 compliant
IPB083N10N3G MOSIR