Manufacturer Part Number
IPB09N03LA
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
25V Drain-to-Source Voltage
-55°C to 175°C Operating Temperature Range
50A Continuous Drain Current at 25°C
9mΩ On-State Resistance at 30A, 10V
1642pF Input Capacitance at 15V
63W Power Dissipation
Product Advantages
High current handling capability
Low on-state resistance for efficient power conversion
Wide operating temperature range
Surface mount package for compact designs
Key Technical Parameters
Drain-to-Source Voltage: 25V
Gate-to-Source Voltage: ±20V
Continuous Drain Current: 50A at 25°C
On-State Resistance: 8.9mΩ at 30A, 10V
Input Capacitance: 1642pF at 15V
Power Dissipation: 63W
Quality and Safety Features
MOSFET technology
RoHS non-compliant
Compatibility
TO-263-3 (DPak) package
Compatible with other OptiMOS series devices
Application Areas
Power conversion and control
Motor drives
Switching regulators
Industrial and automotive electronics
Product Lifecycle
Currently available
Replacement or upgrade options may be available in the future
Key Reasons to Choose
High current handling for efficient power conversion
Low on-state resistance for low power losses
Wide operating temperature range for versatile applications
Surface mount package for compact designs
