Manufacturer Part Number
IPB011N04NGATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with ultra-low on-resistance and fast switching characteristics.
Product Features and Performance
Extremely low on-resistance (RDS(on) = 1.1 mΩ @ 100 A, 10 V)
High current capability (Continuous drain current ID = 180 A @ 25°C)
High power handling (Power dissipation Ptot = 250 W @ Tc)
Fast switching (Input capacitance Ciss = 20,000 pF @ 20 V)
Wide operating temperature range (-55°C to +175°C)
Product Advantages
Optimized for high-efficiency power conversion applications
Excellent thermal performance and reliability
Robust design for demanding applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 40 V
Gate-to-Source Voltage (VGS): ±20 V
Threshold Voltage (VGS(th)): 4 V @ 200 A
On-Resistance (RDS(on)): 1.1 mΩ @ 100 A, 10 V
Continuous Drain Current (ID): 180 A @ 25°C
Input Capacitance (Ciss): 20,000 pF @ 20 V
Gate Charge (Qg): 250 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Suitable for safety-critical applications
Compatibility
Compatible with various power conversion and motor control systems
Application Areas
High-efficiency power supplies
Motor drives
Inverters
Converters
Industrial and automotive applications
Product Lifecycle
Active product
Replacements and upgrades available
Key Reasons to Choose This Product
Exceptional performance and efficiency
Robust and reliable design
Extensive temperature range
Optimized for demanding power conversion applications
Seamless compatibility with various systems
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