Manufacturer Part Number
IPB010N06NATMA1
Manufacturer
Infineon Technologies
Introduction
The IPB010N06NATMA1 is a high-performance N-channel MOSFET transistor from Infineon Technologies designed for high-power applications.
Product Features and Performance
High current carrying capacity up to 180A at 25°C case temperature
Low on-resistance of 1mΩ at 100A, 10V
Wide operating temperature range of -55°C to 175°C
High power dissipation capability of up to 300W
Fast switching speed and low gate charge of 208nC at 10V
Product Advantages
Excellent thermal performance and power handling
Highly efficient power conversion due to low on-resistance
Reliable and robust design for demanding applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 45A (Ta), 180A (Tc)
Input Capacitance (Ciss): 15000pF @ 30V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with various power electronics and motor control systems
Application Areas
Power supplies
Motor drives
Industrial automation
Electric vehicles
Renewable energy systems
Product Lifecycle
This product is currently in production and available
No plans for discontinuation at this time
Upgrades or replacements may become available in the future
Key Reasons to Choose This Product
Exceptional power handling and thermal performance
Industry-leading low on-resistance for improved efficiency
Robust and reliable design for demanding applications
Wide operating temperature range for versatile use
Compatibility with various power electronics systems