Manufacturer Part Number
IPA65R650CEXKSA1
Manufacturer
Infineon Technologies
Introduction
A high-performance N-channel power MOSFET transistor
Product Features and Performance
650V drain-to-source voltage
650mOhm maximum on-resistance at 2.1A and 10V gate-source voltage
7A continuous drain current at 25°C case temperature
440pF maximum input capacitance at 100V drain-source voltage
23nC maximum gate charge at 10V gate-source voltage
Capable of operating in the temperature range of -40°C to 150°C
Product Advantages
High efficiency and low power losses
Robust and reliable performance
Suitable for high-voltage applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 650mOhm
Continuous Drain Current (Id): 7A
Input Capacitance (Ciss): 440pF
Gate Charge (Qg): 23nC
Quality and Safety Features
RoHS3 compliant
Through-hole mounting package (TO-220-3)
Compatibility
Suitable for a wide range of high-voltage power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Product Lifecycle
Current product, no discontinuation or replacement announced
Key Reasons to Choose This Product
Excellent performance with low on-resistance and high voltage rating
Robust and reliable operation over a wide temperature range
Suitable for high-power, high-voltage applications
RoHS3 compliance for environmental sustainability
