Manufacturer Part Number
IPA65R400CEXKSA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel CoolMOS power MOSFET with industry-leading low on-resistance and optimized switching performance.
Product Features and Performance
Very low on-resistance of 400 mΩ at 10 V gate voltage
High drain-source breakdown voltage of 650 V
Fast switching capability with low gate charge of 39 nC at 10 V
Optimized trade-off between RDS(on) and QG
Excellent EMI/RFI performance
Product Advantages
Enables high-efficiency power conversion
Suitable for high-voltage, high-power applications
Reduces system size and cost
Key Technical Parameters
Drain-Source Voltage (VDS): 650 V
Gate-Source Voltage (VGS): ±20 V
On-Resistance (RDS(on)): 400 mΩ @ 3.2 A, 10 V
Continuous Drain Current (ID): 15.1 A (at Tc = 25°C)
Input Capacitance (Ciss): 710 pF @ 100 V
Power Dissipation (Ptot): 31 W (at Tc = 25°C)
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 150°C
Compatibility
Suitable for use in a wide range of high-voltage, high-power applications, such as:
Switch-mode power supplies
Motor drives
Inverters
Solar and wind power converters
Application Areas
Industrial
Consumer
Automotive
Product Lifecycle
The IPA65R400CEXKSA1 is an active and available product from Infineon. There are no indications of it being discontinued or reaching end-of-life. Replacement or upgrade options may be available from Infineon's CoolMOS product family.
Key Reasons to Choose This Product
Industry-leading low on-resistance of 400 mΩ, enabling high-efficiency power conversion
High drain-source breakdown voltage of 650 V, suitable for high-voltage applications
Fast switching capability with low gate charge of 39 nC, reducing switching losses
Optimized trade-off between RDS(on) and QG for improved system performance
Excellent EMI/RFI performance, important for reliable operation in harsh environments
Suitable for high-temperature operation up to 150°C, expanding the application range
RoHS3 compliance, ensuring environmental friendliness
