Manufacturer Part Number
IPA65R420CFD
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor with CoolMOS CFD2 technology, designed for high-voltage power conversion applications.
Product Features and Performance
650V drain-source voltage rating
420mΩ on-resistance at 10V gate-source voltage
7A continuous drain current at 25°C case temperature
2W maximum power dissipation
Optimized for high-frequency, high-efficiency power conversion
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent trade-off between on-resistance and switching performance
Reduced switching losses due to CoolMOS CFD2 technology
Reliable and robust design for demanding power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 420mΩ @ 3.4A, 10V
Continuous Drain Current (Id): 8.7A @ 25°C
Input Capacitance (Ciss): 870pF @ 100V
Power Dissipation (Tc): 31.2W
Quality and Safety Features
Robust TO-220 package with high reliability
Designed and manufactured to high quality standards
Compliant with relevant safety and environmental regulations
Compatibility
Suitable for various high-voltage power conversion applications, such as switch-mode power supplies, motor drives, and renewable energy systems.
Application Areas
High-voltage power conversion
Switch-mode power supplies
Motor drives
Renewable energy systems
Product Lifecycle
This product is an active and widely used component in the Infineon Technologies portfolio.
Replacement or upgrade options may be available, depending on specific application requirements.
Key Reasons to Choose This Product
Excellent performance-to-cost ratio for high-voltage power conversion applications
Reliable and robust design with CoolMOS CFD2 technology
Wide operating temperature range and high power dissipation capability
Compatibility with various high-voltage power conversion systems
Ongoing availability and support from Infineon Technologies