IKA10N60T - Infineon Technologies

Manufacturer Part Number

IKA10N60T

Manufacturer

Infineon Technologies

Introduction

Discrete Semiconductor Product

Transistor IGBT Single

Product Features and Performance

Trench Field Stop IGBT

Operating Temperature: -40°C to 175°C (TJ)

Power Rating: 30 W

Collector-Emitter Breakdown Voltage: 600 V

Collector Current (Max): 11.7 A

Collector-Emitter Saturation Voltage (Max): 2.05 V @ 15 V, 10 A

Reverse Recovery Time: 115 ns

Gate Charge: 62 nC

Collector Current (Pulsed): 30 A

Switching Energy: 160 μJ (on), 270 μJ (off)

Turn-on/-off Delay Time: 12 ns / 215 ns

Product Advantages

High voltage and current handling capability

Low conduction and switching losses

Fast switching performance

Suitable for various power conversion applications

Key Technical Parameters

Voltage Rating: 600 V

Current Rating: 11.7 A

Package: TO-220-3

Input Type: Standard

Quality and Safety Features

Trench Field Stop IGBT technology for improved performance

Tested and verified for reliable operation

Compatibility

Suitable for various power conversion and control applications

Application Areas

Power supplies

Motor drives

Inverters

Welding equipment

Induction heating

Industrial automation

Product Lifecycle

Currently available

No information on discontinuation or replacement

Several Key Reasons to Choose This Product

High voltage and current capability for demanding applications

Low conduction and switching losses for improved efficiency

Fast switching performance for high-speed power conversion

Reliable and well-tested design for industrial-grade operation

Compatibility with a wide range of power conversion applications