Manufacturer Part Number
IXGH20N120BD1
Manufacturer
IXYS Corporation
Introduction
High-power insulated-gate bipolar transistor (IGBT)
Suitable for various power conversion and motor control applications
Product Features and Performance
Designed for high-power applications
Supports high voltage and current operation
Fast switching capabilities
Low on-state voltage drop
Low switching losses
Product Advantages
Reliable and robust performance
Efficient power conversion
Versatile in various applications
Key Technical Parameters
Collector-Emitter Voltage: 1200 V
Collector Current: 40 A
On-state Voltage: 3.4 V @ 15 V, 20 A
Gate Charge: 72 nC
Turn-on/Turn-off Delay Time: 25 ns / 150 ns
Quality and Safety Features
Designed for high-temperature operation (-55°C to 150°C)
Meets industrial safety and reliability standards
Compatibility
Suitable for integration into various power electronics systems
Application Areas
Inverters
Converters
Motor drives
Power supplies
Industrial automation equipment
Product Lifecycle
This product is currently available and actively supported by the manufacturer.
Replacement or upgrade options may be available from the manufacturer or through alternative suppliers.
Key Reasons to Choose This Product
High power handling capability
Fast switching performance
Reliable and robust design
Wide operating temperature range
Suitability for diverse power conversion applications
IXGH16N60TBIXYS / Littelfuse