Manufacturer Part Number
IHW20N135R3
Manufacturer
Infineon Technologies
Introduction
This product is a high-power single IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies.
Product Features and Performance
Trench Field Stop IGBT technology
High power capability up to 310W
Collector-Emitter voltage up to 1350V
Collector current up to 40A (max)
Low on-state voltage drop of 1.8V @ 15V, 20A
Fast switching performance with turn-off time of 335ns
Product Advantages
Excellent efficiency and low power losses
Robust design for high-reliability applications
Suitable for various power conversion and motor control applications
Key Technical Parameters
Collector-Emitter Voltage: 1350V (max)
Collector Current: 40A (max)
On-state Voltage Drop: 1.8V @ 15V, 20A
Gate Charge: 195nC
Switching Energy: 1.3mJ (turn-off)
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -40°C to 175°C
Compatibility
Through-hole mounting in TO-247-3 package
Application Areas
Power conversion systems
Motor drives
Induction heating
Welding equipment
Uninterruptible power supplies (UPS)
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgraded products may be available in the future.
Key Reasons to Choose This Product
High power capability and efficiency for demanding applications
Robust design and wide operating temperature range
Fast switching performance for improved system efficiency
RoHS compliance for environmental sustainability
Compatibility with standard through-hole mounting
