Manufacturer Part Number
IHW20N120R5
Manufacturer
Infineon Technologies
Introduction
High-power insulated-gate bipolar transistor (IGBT)
Designed for high-power, high-voltage applications
Product Features and Performance
Trench Field Stop IGBT technology
Low conduction losses
Fast switching and low switching losses
High short-circuit robustness
Wide safe operating area (SOA)
High thermal cycling capability
Product Advantages
Reliable and robust performance
Efficient power conversion
Suitable for high-power, high-voltage applications
Key Technical Parameters
Collector-Emitter Voltage (VCES): 1200 V
Collector Current (IC): 40 A
Collector-Emitter Saturation Voltage (VCE(on)): 1.75 V @ 15 V, 20 A
Gate Charge (Qg): 170 nC
Switching Energy (Eoff): 750 μJ
Quality and Safety Features
Designed for high-reliability applications
Meets relevant safety standards
Compatibility
Suitable for use in a wide range of high-power, high-voltage applications
Application Areas
Industrial motor drives
Power supplies
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Product Lifecycle
Current product, no discontinuation planned
Replacement or upgrade options available from Infineon Technologies
Several Key Reasons to Choose This Product
Reliable and robust performance
Low conduction and switching losses for efficient power conversion
Wide safe operating area and high thermal cycling capability
Suitable for high-power, high-voltage applications
Backed by Infineon Technologies' expertise and quality standards
