Manufacturer Part Number
IHW20N120R2
Manufacturer
Infineon Technologies
Introduction
The IHW20N120R2 is a high-performance insulated-gate bipolar transistor (IGBT) from Infineon Technologies. It is designed for a wide range of industrial and power electronics applications.
Product Features and Performance
Trench Field Stop IGBT technology
Low conduction and switching losses
Fast switching speed
High current capability up to 40A
Voltage rating up to 1200V
Compact TO-247-3 package
Operating temperature range of -40°C to 175°C
Product Advantages
Improved efficiency and reduced energy consumption
Reliable and durable performance
Versatile applicability in various power electronics systems
Key Technical Parameters
Collector-Emitter Voltage (V_CE(max)): 1200V
Collector Current (I_C(max)): 40A
Collector-Emitter Saturation Voltage (V_CE(on)): 1.75V @ 15V, 20A
Gate Charge (Q_G): 143nC
Switching Energy (E_off): 1.2mJ
Quality and Safety Features
Robustly designed for industrial applications
Compliance with international safety standards
Compatibility
Suitable for a wide range of power electronics applications, including motor drives, power supplies, and inverters
Application Areas
Industrial automation and control
Power conversion and conditioning
Renewable energy systems
Household and consumer electronics
Product Lifecycle
The IHW20N120R2 is an active product and is not nearing discontinuation.
Replacement or upgrade options may be available from Infineon Technologies.
Key Reasons to Choose This Product
High-performance IGBT technology for improved efficiency and reliability
Broad operating temperature range for versatile application
Compact and robust package design for industrial environments
Excellent technical specifications and performance characteristics
Backed by Infineon's expertise and customer support
