Manufacturer Part Number
IGP50N60T
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
IGBT (Insulated-Gate Bipolar Transistor) Transistor
Product Features and Performance
Trench Field Stop IGBT Technology
High Power Capability: 333W
Wide Operating Temperature Range: -40°C to 175°C
Fast Switching Capabilities: 26ns (turn-on), 299ns (turn-off)
Low Switching Losses: 1.2mJ (turn-on), 1.4mJ (turn-off)
High Collector Current Rating: 90A (max)
High Voltage Rating: 600V (max)
Product Advantages
Efficient power conversion with low switching losses
Robust design for high-temperature operation
Reliable performance in demanding applications
Key Technical Parameters
IGBT Type: Trench Field Stop
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 90A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Gate Charge: 310nC
Current Collector Pulsed (Icm): 150A
Switching Energy: 1.2mJ (on), 1.4mJ (off)
Td (on/off) @ 25°C: 26ns/299ns
Quality and Safety Features
Hermetically sealed TO-220-3 package
Designed for reliable and safe operation
Compatibility
Compatible with various power conversion and motor control applications
Application Areas
Inverters
Converters
Motor Drives
Power Supplies
Industrial and Residential Applications
Product Lifecycle
This product is an active and widely used IGBT transistor
Replacements and upgrades are available from Infineon Technologies
Several Key Reasons to Choose This Product
Excellent power handling capability with low switching losses
Robust design for high-temperature operation
Fast switching performance for efficient power conversion
Reliable and safe operation in a wide range of applications
Compatibility with various power electronics systems
Availability of replacement and upgrade options from the manufacturer
