IGP03N120H2 - Infineon Technologies

Manufacturer Part Number

IGP03N120H2

Manufacturer

Infineon Technologies

Introduction

Discrete Semiconductor Product

Transistors IGBTs Single

Product Features and Performance

ROHS3 Compliant

TO-220-3 Package

Operating Temperature: -40°C to 150°C

Power Rating: 62.5 W

Collector-Emitter Breakdown Voltage: 1200 V

Collector Current (Max): 9.6 A

Collector-Emitter Saturation Voltage: 2.8 V @ 15 V, 3 A

Gate Charge: 22 nC

Collector Current (Pulsed): 9.9 A

Switching Energy: 290 μJ

Turn-on/Turn-off Delay Time: 9.2 ns / 281 ns

Product Advantages

High voltage and current capability

Low on-state voltage

Fast switching performance

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 1200 V

Current Collector (Ic) (Max): 9.6 A

Vce(on) (Max) @ Vge, Ic: 2.8 V @ 15 V, 3 A

Gate Charge: 22 nC

Td (on/off) @ 25°C: 9.2 ns / 281 ns

Quality and Safety Features

ROHS3 Compliant

Through Hole Mounting

Compatibility

Standard Input Type

Application Areas

Power conversion

Motor control

Industrial electronics

Product Lifecycle

Current product, no discontinuation planned

Replacement/upgrade options available from Infineon

Key Reasons to Choose

High voltage and current capability

Low on-state voltage for efficient operation

Fast switching performance for high-speed applications

ROHS3 compliance for environmental compatibility

Through hole mounting for ease of integration