Manufacturer Part Number
CY7C1318KV18-250BZXC
Manufacturer
Infineon Technologies
Introduction
High-speed Synchronous DDR II SRAM optimized for fast write and read operations
Product Features and Performance
Volatile memory type
Synchronous DDR II SRAM technology
18Mbit memory size
1M x 18 memory organization
Parallel memory interface
250 MHz clock frequency
Product Advantages
Fast access time suitable for high-performance computing
Design flexibility with parallel interface
Suitable for high-speed data buffering and cache applications
Key Technical Parameters
Memory Type: Volatile SRAM
Memory Format: SRAM - Synchronous, DDR II
Memory Size: 18Mbit
Memory Organization: 1M x 18
Clock Frequency: 250 MHz
Voltage Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C
Quality and Safety Features
Operational across standard temperature range 0°C ~ 70°C
Stable performance under recommended voltage supply range
Compatibility
Compatible with systems and boards that support 165-LBGA package and parallel interface
Application Areas
Advanced computing
Networking equipment
Telecommunications
Data storage
High-speed data processing
Product Lifecycle
Active product status
Check for updates on the lifecycle for potential discontinuation notices
Several Key Reasons to Choose This Product
High-speed memory capability enhances system performance
Reliable manufacturer with a reputable background in semiconductor technology
Broad compatibility eases integration with various devices and systems
Satisfies demands for memory-intensive applications
Robust design ideal for a wide temperature range environments