Manufacturer Part Number
CY7C1315BV18-200BZXI
Manufacturer
Infineon Technologies
Introduction
High-speed 18Mbit Synchronous Quad Data Rate (QDR) II SRAM
Product Features and Performance
Volatile Memory
SRAM - Synchronous, QDR II Technology
Memory Size of 18Mbit
Organized as 512K x 36
Parallel Memory Interface
High Clock Frequency Support of 200 MHz
Product Advantages
Quick data access times
Supports high-performance computing and networking applications
Key Technical Parameters
Memory Type: Volatile SRAM
Memory Format: SRAM
Memory Size: 18Mbit
Memory Organization: 512K x 36
Clock Frequency: 200 MHz
Voltage Supply: 1.7V ~ 1.9V
Operating Temperature Range: -40°C ~ 85°C
Surface Mount 165-LBGA Package
Quality and Safety Features
Operates within industrial temperature ranges
Compatibility
Standard Parallel Interface for Broad Device Compatibility
Application Areas
High-performance networking
Telecommunication equipment
Cache memory for processors
Product Lifecycle
Obsolete
Availability of replacements or upgrades may be limited
Several Key Reasons to Choose This Product
Advanced performance for high-end applications
Robust temperature tolerance for industrial use
High clock speeds enable efficient data processing
Large memory size suitable for sophisticated tasks
Well-suited for telecommunications and networking equipment
CY7C1318AV18-167BZCCypress Semiconductor CorpIC SRAM 18MBIT PAR 165FBGA