Manufacturer Part Number
CY7C1315KV18-250BZC
Manufacturer
Infineon Technologies
Introduction
High-speed synchronous quad data rate II SRAM memory designed for high-performance computing and networking applications.
Product Features and Performance
18Mbit storage
512K x 36 organization
Synchronous QDR II technology
250 MHz clock frequency
Parallel memory interface
Suitable for high-speed operations and data buffering
Product Advantages
Fast access and cycle times
Reliable data retention
Optimized for high-bandwidth applications
Enables enhanced system performance
Key Technical Parameters
Memory Type: Volatile (SRAM)
Memory Format: SRAM - Synchronous, QDR II
Memory Size: 18Mbit
Memory Organization: 512K x 36
Clock Frequency: 250 MHz
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Quality and Safety Features
Built to adhere to industry standards for SRAM memory devices
Wide operating temperature range ensuring stability and reliability across different environments
Compatibility
Compatible with systems requiring a fast SRAM memory with a parallel interface
Surface mount 165-LBGA package for integration with modern PCBs
Application Areas
High-performance computing systems
Networking equipment
Telecommunications
Servers and Data centers
Product Lifecycle
Last Time Buy status indicates the product is nearing discontinuation
Users should consider future needs for replacement or upgrade availability
Several Key Reasons to Choose This Product
High-speed operation at 250 MHz supporting demanding computing tasks
Large 18Mbit memory size suitable for complex processes
QDR II technology optimizing data throughput and system performance
Wide voltage supply range offering flexibility in power design
Resilient across temperatures ranging from 0°C to 70°C
Future-proof design with 165-FBGA package compatible with modern hardware standards