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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single~~BSS816NWH6327XTSA1~~

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BSS816NWH6327XTSA1 - Infineon Technologies

Manufacturer Part Number: BSS816NWH6327XTSA1

Manufacturer: Infineon Technologies

Allelco Part Number: 32D-BSS816NWH6327XTSA1

ECAD Model

Parts Description: MOSFET N-CH 20V 1.4A SOT323-3

Detailed Description

Package: SC-70, SOT-323

Data sheet: ~~BSS816NWH6327XTSA1.pdf~~

RoHs Status: ROHS3 Compliant

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In stock: 416300

Specifications

BSS816NWH6327XTSA1 Tech Specifications
Infineon Technologies - BSS816NWH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies - BSS816NWH6327XTSA1

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Vgs(th) (Max) @ Id	750mV @ 3.7µA
Vgs (Max)	±8V
Technology	MOSFET (Metal Oxide)
Supplier Device Package	PG-SOT323
Series	OptiMOS™
Rds On (Max) @ Id, Vgs	160mOhm @ 1.4A, 2.5V
Power Dissipation (Max)	500mW (Ta)
Package / Case	SC-70, SOT-323
Package	Tape & Reel (TR)

Product Attribute	Attribute Value
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds	180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	0.6 nC @ 2.5 V
FET Type	N-Channel
FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 2.5V
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	1.4A (Ta)
Base Product Number	BSS816

Parts Introduction

Manufacturer Part Number

BSS816NWH6327XTSA1

Manufacturer

Infineon Technologies

Introduction

Discrete Semiconductor Product

Single Transistor FET, MOSFET

Product Features and Performance

N-Channel MOSFET

Optimized for low RDS(on) and low gate charge

Suitable for high-frequency switching applications

Product Advantages

Low on-resistance for high efficiency

Fast switching speed

Compact surface-mount package

Key Technical Parameters

Drain to Source Voltage (VDS): 20V

Gate-Source Voltage (VGS): ±8V

On-Resistance (RDS(on)): 160mΩ @ 1.4A, 2.5V

Continuous Drain Current (ID): 1.4A

Input Capacitance (Ciss): 180pF @ 10V

Power Dissipation: 500mW

Quality and Safety Features

RoHS3 compliant

Automotive-qualified

Compatibility

Compatible with surface mount applications

Application Areas

High-frequency switching applications

Power management circuits

Telecommunications equipment

Industrial automation

Product Lifecycle

Current product

Replacement parts and upgrades available

Key Reasons to Choose

Optimized for low on-resistance and fast switching

Compact surface-mount package

Automotive-qualified for reliable performance

Suitable for a wide range of high-frequency switching applications

Parts with Similar Specifications

The three parts on the right have similar specifications to Infineon Technologies BSS816NWH6327XTSA1

Product Attribute
Part Number	BSS816NWH6327XTSA1	BSS83PH6327XTSA1	BSS806NH6327XTSA1	BSS83PE6327
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Supplier Device Package	PG-SOT323	PG-SOT23	PG-SOT23	PG-SOT23
Base Product Number	BSS816	BSS83PH6327	BSS806	-
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds	180 pF @ 10 V	78 pF @ 25 V	529 pF @ 10 V	78 pF @ 25 V
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Series	OptiMOS™	SIPMOS®	OptiMOS™	SIPMOS®
Current - Continuous Drain (Id) @ 25°C	1.4A (Ta)	330mA (Ta)	2.3A (Ta)	330mA (Ta)
Drain to Source Voltage (Vdss)	20 V	60 V	20 V	60 V
Package	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)
Package / Case	SC-70, SOT-323	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs	0.6 nC @ 2.5 V	3.57 nC @ 10 V	1.7 nC @ 2.5 V	3.57 nC @ 10 V
Vgs(th) (Max) @ Id	750mV @ 3.7µA	2V @ 80µA	750mV @ 11µA	2V @ 80µA
FET Feature	-	-	-	-
Power Dissipation (Max)	500mW (Ta)	360mW (Ta)	500mW (Ta)	360mW (Ta)
FET Type	N-Channel	P-Channel	N-Channel	P-Channel
Rds On (Max) @ Id, Vgs	160mOhm @ 1.4A, 2.5V	2Ohm @ 330mA, 10V	57mOhm @ 2.3A, 2.5V	2Ohm @ 330mA, 10V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 2.5V	4.5V, 10V	1.8V, 2.5V	4.5V, 10V
Vgs (Max)	±8V	±20V	±8V	±20V

BSS816NWH6327XTSA1 Datasheet PDF

Download BSS816NWH6327XTSA1 pdf datasheets and Infineon Technologies documentation for BSS816NWH6327XTSA1 - Infineon Technologies.

Other Related Documents: Part Number Guide.pdf
PCN Assembly/Origin: Mult Dev Site Chgs 2/Feb/2023.pdf

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America	Brazil	7
Europe	Germany	5
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Oceania	Australia	6
Oceania	New Zealand	5
Asia	India	4
Asia	Japan	4
Middle East	Israel	6

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1.00kg-2.00kg	USD$40.00 - USD$80.00
2.00kg-3.00kg	USD$50.00 - USD$100.00

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