Manufacturer Part Number
BSS806NH6327XTSA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel MOSFET transistor designed for power management and control applications.
Product Features and Performance
Low on-state resistance (RDS(on)) for high efficiency
Fast switching speed
Optimized for low gate charge for energy-efficient operation
Wide operating temperature range of -55°C to 150°C
Low input capacitance (Ciss) for high-speed switching
Product Advantages
Excellent thermal performance and power dissipation
Compact surface-mount package for space-saving designs
Highly reliable and robust construction
Key Technical Parameters
Drain-to-Source Voltage (VDS): 20V
Gate-to-Source Voltage (VGS): ±8V
Continuous Drain Current (ID): 2.3A
On-State Resistance (RDS(on)): 57mΩ
Input Capacitance (Ciss): 529pF
Power Dissipation (PD): 500mW
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Compatible with a wide range of power management and control circuits
Application Areas
Switch-mode power supplies
Motor controls
LED drivers
Battery chargers
General power management and control applications
Product Lifecycle
Currently available, no known discontinuation plans
Replacement and upgrade options available from Infineon Technologies
Key Reasons to Choose
Excellent efficiency and thermal performance
Fast switching speed for high-frequency operation
Compact and reliable surface-mount package
Wide operating temperature range for diverse applications
Strong technical support and product availability from Infineon
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