Manufacturer Part Number
BSS83PH6327XTSA1
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
P-Channel MOSFET Transistor
Product Features and Performance
Low on-resistance
Fast switching
High power handling
Wide voltage range
Product Advantages
Excellent thermal performance
High reliability
Space-saving surface mount package
Suitable for high-frequency applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Gate to Source Voltage (Vgs): ±20V
On-resistance (Rds(on)): 2Ω @ 330mA, 10V
Continuous Drain Current (Id): 330mA
Input Capacitance (Ciss): 78pF @ 25V
Power Dissipation: 360mW
Quality and Safety Features
RoHS3 Compliant
Wide operating temperature range: -55°C to 150°C
Compatibility
TO-236-3, SC-59, SOT-23-3 package
Compatible with various electronic circuits and applications
Application Areas
Switching power supplies
Motor control
Battery management systems
Portable electronics
Product Lifecycle
Current production model
Replacement or upgrade options available from Infineon
Key Reasons to Choose
Excellent thermal performance and reliability
Suitable for high-frequency and high-power applications
Space-saving surface mount package
Compatibility with various electronic circuits and applications