Manufacturer Part Number
BSP297L6327
Manufacturer
Infineon Technologies
Introduction
This is a discrete semiconductor product, specifically a Transistor - FET, MOSFET - Single device.
Product Features and Performance
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) technology
N-Channel FET type
Operates in a temperature range of -55°C to 150°C
Drain-to-Source Voltage (Vdss) of 200V
Maximum Gate-to-Source Voltage (Vgs) of ±20V
On-state Resistance (Rds(on)) of 1.8Ω @ 660mA, 10V
Continuous Drain Current (Id) of 660mA @ 25°C
Input Capacitance (Ciss) of 357pF @ 25V
Power Dissipation (Max) of 1.8W
Gate Charge (Qg) of 16.1nC @ 10V
Product Advantages
High voltage and current handling capability
Low on-state resistance for efficient power conversion
Wide operating temperature range
Compact surface mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Gate-to-Source Voltage (Vgs): ±20V
On-state Resistance (Rds(on)): 1.8Ω
Continuous Drain Current (Id): 660mA
Input Capacitance (Ciss): 357pF
Power Dissipation (Max): 1.8W
Quality and Safety Features
RoHS3 compliant
Suitable for safety-critical applications
Compatibility
Compatible with a variety of electronic circuits and systems
Application Areas
Power management circuits
Switching power supplies
Motor control
Industrial automation
Consumer electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from Infineon Technologies.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-state resistance for efficient power conversion
Wide operating temperature range
Compact surface mount package
RoHS3 compliance for use in safety-critical applications
Compatibility with a variety of electronic circuits and systems
BSP298 L6327Cypress Semiconductor (Infineon Technologies)