Manufacturer Part Number
BSP297H6327XTSA1
Manufacturer
Infineon Technologies
Introduction
N-channel power MOSFET in a TO-261 surface mount package
Designed for high-frequency switching applications
Product Features and Performance
Drain-to-source voltage (Vdss) of 200V
Continuous drain current (Id) of 660mA at 25°C
Low on-resistance (Rds(on)) of 1.8Ω at 10V gate-to-source voltage
Fast switching performance
Suitable for high-frequency switching applications
Product Advantages
Compact surface mount package
High voltage and current handling capability
Low on-resistance for improved efficiency
Fast switching for high-frequency applications
Key Technical Parameters
Vdss: 200V
Vgs(max): ±20V
Rds(on)(max): 1.8Ω @ 660mA, 10V
Id(max): 660mA (at 25°C)
Input capacitance (Ciss): 357pF @ 25V
Power dissipation (max): 1.8W (at 25°C)
Quality and Safety Features
ROHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with a wide range of high-frequency switching applications
Application Areas
Switch-mode power supplies
Inverters
Motor drives
Industrial and consumer electronics
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgraded models may become available in the future as technology advances.
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for improved efficiency
Fast switching performance for high-frequency applications
Compact surface mount package
Proven reliability and quality
BSP296NH6327HAMOS