Manufacturer Part Number
BSP296NH6327XTSA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET for high efficiency power supply and motor drive applications
Product Features and Performance
100V drain-source voltage
Low on-resistance of 600mΩ at 1.2A, 10V
Low gate charge of 6.7nC at 10V
Wide operating temperature range of -55°C to 150°C
Surface mount package TO-261-4
Product Advantages
Optimized for high efficiency power conversion
Excellent switching performance
Robust and reliable design
Compact surface mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 600mΩ @ 1.2A, 10V
Continuous Drain Current (Id): 1.2A @ 25°C
Input Capacitance (Ciss): 152.7pF @ 25V
Power Dissipation (Ptot): 1.8W @ 25°C
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging for automated assembly
Compatibility
Suitable for high efficiency power supply and motor drive applications
Application Areas
Switching power supplies
Power factor correction circuits
Motor drives
Industrial automation equipment
Product Lifecycle
This product is an active and in-production part from Infineon Technologies.
Replacement or upgrade options may be available from Infineon or other manufacturers.
Key Reasons to Choose This Product
Excellent efficiency and switching performance for power conversion applications
Robust and reliable design for industrial and harsh environments
Compact surface mount package for space-constrained designs
Wide operating temperature range for versatile usage
RoHS3 compliance for environmentally conscious applications
BSP296 MOSFreescale / NXP Semiconductors
BSP296NH6327HAMOS