Manufacturer Part Number
BSO119N03S
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET with low RDS(on) for efficient power conversion and management applications
Product Features and Performance
Ultra-low on-resistance down to 11.9 mΩ
High current capability up to 9A
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 1730 pF
Product Advantages
Excellent efficiency and power density
Reliable and robust design
Suitable for high-frequency and high-current applications
Key Technical Parameters
Drain-to-source voltage (VDS): 30V
Gate-to-source voltage (VGS): ±20V
On-resistance (RDS(on)): 11.9 mΩ
Continuous drain current (ID): 9A
Input capacitance (Ciss): 1730 pF
Power dissipation (Pd): 1.56W
Quality and Safety Features
Robust and reliable design
Complies with industry safety standards
Compatibility
Suitable for a wide range of power conversion and management applications
Application Areas
Switching power supplies
Motor drives
Inverters
Battery management systems
Industrial and automotive electronics
Product Lifecycle
Currently available
No known discontinuation plans
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and power density
Reliable and robust design
Wide operating temperature range
High current capability
Low on-resistance and input capacitance
BSO083N03MS
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