Manufacturer Part Number
BSO080P03SHXUMA1
Manufacturer
Infineon Technologies
Introduction
High-performance P-channel MOSFET optimized for efficient power conversion applications
Product Features and Performance
Optimized for high-efficiency power conversion
Low on-resistance for low conduction losses
Fast switching speed for reduced switching losses
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent efficiency and power density
Compact design with small footprint
Reliable and robust performance
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 8mΩ @ 14.9A, 10V
Continuous Drain Current (Id): 12.6A @ 25°C
Input Capacitance (Ciss): 5890pF @ 25V
Power Dissipation (Pd): 1.79W @ 25°C
Quality and Safety Features
RoHS3 compliant
Reliable and robust design for industrial applications
Compatibility
Surface mount package (8-SOIC)
Suitable for use in various power conversion circuits
Application Areas
Switch-mode power supplies
Motor drives
DC-DC converters
Industrial and consumer electronics
Product Lifecycle
Currently available
No known plans for discontinuation
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Excellent efficiency and power density for high-performance power conversion
Low on-resistance and fast switching for reduced power losses
Robust and reliable design for industrial and consumer electronics applications
Wide operating temperature range for flexible system design
Compact surface mount package for space-constrained designs
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