Manufacturer Part Number
BSO080P03NS3G
Manufacturer
Infineon Technologies
Introduction
High-performance P-channel OptiMOS 3 MOSFET with low on-resistance and fast switching characteristics for efficient power conversion applications.
Product Features and Performance
Low on-resistance of 8 mOhm @ 14.8 A, 10 V
High current handling capability of 12 A continuous @ 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching with low gate charge of 81 nC @ 10 V
Low input capacitance of 6750 pF @ 15 V
High drain-source voltage rating of 30 V
Product Advantages
Improved energy efficiency in power conversion applications
Reduced power losses and heat dissipation
Reliable operation across a wide temperature range
Compact design with surface mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 30 V
Gate-Source Voltage (Vgs) (Max): ±25 V
Drain Current (Id) (Continuous): 12 A @ 25°C
On-Resistance (Rds(on)): 8 mOhm @ 14.8 A, 10 V
Input Capacitance (Ciss): 6750 pF @ 15 V
Power Dissipation (Max): 1.6 W @ 25°C
Quality and Safety Features
Robust MOSFET design with high reliability
Compliance with relevant industry standards
Compatibility
Suitable for a wide range of power conversion applications, including motor drives, switching power supplies, and power management circuits.
Application Areas
Power conversion
Motor drives
Switching power supplies
Power management
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacement or upgrade options may be available from Infineon Technologies.
Key Reasons to Choose This Product
Excellent energy efficiency and low power losses
High current handling capability and wide temperature range
Fast switching performance for efficient power conversion
Compact surface mount package for space-constrained designs
Reliable and high-quality MOSFET solution from a leading semiconductor manufacturer
BSO080P03SHCypress Semiconductor (Infineon Technologies)