Manufacturer Part Number
BSD235CH6327XTSA1
Manufacturer
Infineon Technologies
Introduction
High-performance N- and P-channel MOSFET array in a small package for space-constrained applications.
Product Features and Performance
Optimized on-resistance for efficient power conversion
Fast switching for improved efficiency
Compact 6-pin VSSOP package
Product Advantages
Space-saving design
Efficient power conversion
Improved switching performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
On-resistance (Rds(on)): 350mOhm @ 950mA, 4.5V
Continuous Drain Current (Id): 950mA, 530mA
Input Capacitance (Ciss): 47pF @ 10V
Gate Threshold Voltage (Vgs(th)): 1.2V @ 1.6A
Gate Charge (Qg): 0.34nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
Compatible with various electronic devices and circuits requiring efficient power switching
Application Areas
Power supplies
Motor drives
Telecommunication equipment
Industrial controls
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose This Product
Optimized performance for efficient power conversion
Compact and space-saving design
Reliable operation across a wide temperature range
Compatibility with various electronic applications
BSD314SPE H6327Cypress Semiconductor (Infineon Technologies)
BSD235NL6327INFINEONTECH