Manufacturer Part Number
BSD223PH6327XTSA1
Manufacturer
Infineon Technologies
Introduction
Discrete semiconductor product, Transistors - FETs, MOSFETs - Arrays
Product Features and Performance
Dual P-Channel MOSFET
Logic Level Gate, 20V Drain to Source Voltage
2Ω On-Resistance @ 390mA Drain Current, 4.5V Gate Voltage
56pF Input Capacitance @ 15V Drain to Source Voltage
62nC Gate Charge @ 4.5V Gate Voltage
Operating Temperature Range: -55°C to 150°C
Product Advantages
Optimized for low voltage, low power applications
Compact 6-VSSOP package
RoHS compliant
Key Technical Parameters
Continuous Drain Current (Id): 390mA @ 25°C
Threshold Voltage (Vgs(th)): 1.2V @ 1.5A Drain Current
Power Rating: 250mW
Quality and Safety Features
RoHS3 compliant
Reliable surface mount package
Compatibility
Compatible with low voltage, low power electronic circuits and devices
Application Areas
Suitable for a variety of low voltage, low power applications such as:
Power management circuits
Switching circuits
Driver circuits
Battery-powered devices
Product Lifecycle
Currently available, no indication of discontinuation. Replacement or upgrade options may be available from Infineon or other MOSFET manufacturers.
Key Reasons to Choose This Product
Optimized performance for low voltage, low power applications
Compact and reliable 6-VSSOP package
RoHS compliance for environmental responsibility
Wide operating temperature range of -55°C to 150°C
Excellent on-resistance and gate charge characteristics
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