Manufacturer Part Number
BSD314SPEH6327XTSA1
Manufacturer
Infineon Technologies
Introduction
High-performance P-channel MOSFET with OptiMOS technology for power management applications
Product Features and Performance
Low on-resistance for high efficiency
Fast switching speed
Low gate charge for easy drive
Optimized for high-power density designs
Suitable for DC-DC converters, motor drives, and other power management applications
Product Advantages
Excellent power efficiency
Compact design
Reliable and stable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20 V
On-resistance (Rds On): 140 mOhm @ 1.5 A, 10 V
Continuous Drain Current (Id): 1.5 A
Input Capacitance (Ciss): 294 pF @ 15 V
Power Dissipation (Max): 500 mW
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operations (-55°C to 150°C)
Compatibility
Suitable for surface mount applications
Compatible with various power management circuits and systems
Application Areas
DC-DC converters
Motor drives
Power management systems
Industrial and consumer electronics
Product Lifecycle
Currently available
No plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power efficiency and performance
Compact and reliable design
Optimized for high-power density applications
Suitable for a wide range of power management systems
RoHS3 compliance and high-temperature operation
BSD235NH6327XTSA1Infineon TechnologiesMOSFET 2N-CH 20V 0.95A SOT363